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F1206 datasheet

    
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F1206 Datasheet

 Datasheet for
Description:8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Manufacturer:distributor
Temp. range:Min: -65°C | Max: 150°C
Package:Not available...
Pins:2
Datasheet:F1206.PDF (36Kb)



F1206.PDF

F1206 Datasheet

F1206 datasheet


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