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P281 datasheet

    
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P281 Datasheet

 Datasheet for
Description:2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor
Manufacturer:distributor
Temp. range:Min: -65°C | Max: 150°C
Package:SO-8
Pins:8
Datasheet:P281.PDF (38Kb)



P281.PDF

P281 Datasheet

P281 datasheet


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