IRC640 Datasheet |  | | Description: | HEXFET power MOSFET. Continuous drain current 18A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.18 Ohm | | Manufacturer: | International-Rectifier | | Temp. range: | Min: -55°C | Max: 150°C | | Package: | TO-220 | | Pins: | 5 | | Datasheet: | IRC640.PDF (228Kb) |
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