W4NXE8C-SD00 Datasheet | | Description: | Diameter: 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Manufacturer: | distributor | Temp. range: | Min: - | Max: - | Package: | Not available... | Pins: | - | Datasheet: | W4NXE8C-SD00.PDF (279Kb) |
|
|