| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AT-113TR | Frequency 0.5-2 GHz, 40dB,3V voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | - | 8 | -40°C | 85°C | 50 K |
| BAT14-113 | HiRel Silicon schottky diode | Infineon-formely-Siemens | T | 2 | -55°C | 150°C | 125 K |
| BAT15-113ES | HiRel Silicon schottky diode | Infineon-formely-Siemens | T | 2 | -55°C | 150°C | 134 K |
| BAT15-113H | HiRel Silicon schottky diode | Infineon-formely-Siemens | T | 2 | -55°C | 150°C | 134 K |
| BAT15-113P | HiRel Silicon schottky diode | Infineon-formely-Siemens | T | 2 | -55°C | 150°C | 134 K |
| BAT15-113S | HiRel Silicon schottky diode | Infineon-formely-Siemens | T | 2 | -55°C | 150°C | 134 K |
| HS-1135RH | Radiation Hardened, High Speed, Low Power Current Feedback Amplifier with Programmable Output Limiting | Intersil-Corporation | - | - | - | - | 63 K |
| HS-1135RH | Radiation Hardened, High Speed, Low Power Current Feedback Amplifier with Programmable Output Limiting | Intersil-Corporation | - | - | - | - | 63 K |
| HS-1135RH | Radiation Hardened, High Speed, Low Power Current Feedback Amplifier with Programmable Output Limiting | Intersil-Corporation | - | - | - | - | 63 K |
| RPI-1133 | Photointerrupter double-layer mold type | ROHM | - | 5 | -20°C | 60°C | 61 K |
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