| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FST6800QSC | 10-Bit Bus Switch with Pre-Charged Outputs | Fairchild-Semiconductor | QSOP | 24 | - | - | 121 K |
| FST6800QSCX | 10-Bit Bus Switch with Pre-Charged Outputs | Fairchild-Semiconductor | QSOP | 24 | - | - | 121 K |
| FSTU6800QSC | 10-Bit Bus Switch with Pre-Charge Outputs and -2V Undershoot Hardened Circuit (UHC) Protection | Fairchild-Semiconductor | QSOP | 24 | - | - | 181 K |
| FSTU6800QSCX | 10-Bit Bus Switch with Pre-Charge Outputs and -2V Undershoot Hardened Circuit (UHC) Protection | Fairchild-Semiconductor | QSOP | 24 | - | - | 181 K |
| LC378100QM | 8MEG (1048576words x 8bit) mask ROM internal clocked silicon gate | SANYO-Electric-Co--Ltd- | SOP32 | 32 | -10°C | 70°C | 64 K |
| LC378100QT | 8MEG (1048576words x 8bit) mask ROM internal clocked silicon gate | SANYO-Electric-Co--Ltd- | TSOP32 | 32 | -10°C | 70°C | 64 K |
| MG100Q2YS50 | Silicon N-channel IGBT GTR module for high power switching, motor control applications | Toshiba | - | 7 | - | - | 339 K |
| MG100Q2YS51 | Silicon N-channel IGBT GTR module for high power switching, motor control applications | Toshiba | - | 7 | - | - | 341 K |
| MG600Q1US41 | Silicon N-channel IGBT GTR module for high power switching, motor control applications | Toshiba | - | 19 | - | - | 288 K |
| MG600Q1US51 | Silicon N-channel IGBT GTR module for high power switching, motor control applications | Toshiba | - | 4 | - | - | 305 K |
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