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080D

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IDT79R464080DULow-cost embedded orion risc mocroprocessorIntegrated-Device-Technology-Inc-PQFP1280°C85°C121 K
IDT79R464080DUILow-cost embedded orion risc mocroprocessorIntegrated-Device-Technology-Inc-PQFP128-40°C85°C121 K
IDT79RV464080DULow-cost embedded orion risc mocroprocessorIntegrated-Device-Technology-Inc-PQFP1280°C85°C121 K
IDT79RV464080DULow-cost embedded orion risc mocroprocessorIntegrated-Device-Technology-Inc-PQFP1280°C85°C121 K
IDT79RV464080DUILow-cost embedded orion risc mocroprocessorIntegrated-Device-Technology-Inc-PQFP128-40°C85°C121 K
MA3Z080DSilicon epitaxial planer type band switching diodePanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----40 K
MC12080D1.1 GHz prescalerMotorola-80°C85°C74 K
SB1080DC-T3Reverse voltage: 80.00V; 10A D2PAK surface mount schottky barrier rectifierdistributor-3-50°C150°C46 K
SB1080DC-T3Reverse voltage: 80.00V; 10A D2PAK surface mount schottky barrier rectifierdistributor-3-50°C150°C46 K
SB1080DC-T3Reverse voltage: 80.00V; 10A D2PAK surface mount schottky barrier rectifierdistributor-3-50°C150°C46 K
TFK3080DNPN silicon tripleton power transistorVishay-Telefunken-4-40°C150°C463 K
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