| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHB100N03LT | 25 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 331 K |
| PHB130N03LT | TrenchMOS transistor Logic level FET | Philips-Semiconductors | SOT404 | - | - | - | 51 K |
| PHD50N03LT | N-channel TrenchMOS(TM) transistor Logic level FET | Philips-Semiconductors | SOT428 | - | - | - | 108 K |
| PHP130N03LT | TrenchMOS transistor Logic level FET | Philips-Semiconductors | SOT78 | - | - | - | 51 K |
| PHP50N03LT | N-channel TrenchMOS(TM) transistor Logic level FET | Philips-Semiconductors | SOT78 | - | - | - | 108 K |
| PHP50N03LT | N-channel TrenchMOS(TM) transistor Logic level FET | Philips-Semiconductors | SOT78 | - | - | - | 108 K |
| STB60N03L-10 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 87 K |
| STD20N03L | Power dissipation 80 W Transistor polarity N Channel Current Id cont. 20 A Current Idm pulse 80 A Voltage Vgs th max. 2.5 V Voltage Vds max 30 V Resistance Rds on 0.022 R Temperature current 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 105 K |
| STP40N03L-20 | N-CHANNLE ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 65 K |
| STP80N03L-06 | N-CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 77 K |
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