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1010E

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BS616LV1010EC70ns 2.4-5.5V ultra low power/voltage CMOS SRAM 64K x 16bitdistributorTSOP440°C70°C216 K
BS616LV1010EI70ns 2.4-5.5V ultra low power/voltage CMOS SRAM 64K x 16bitdistributorTSOP440°C85°C216 K
BS616UV1010EC150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bitdistributorTSOP440°C70°C216 K
BS616UV1010EI150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bitdistributorTSOP44-40°C85°C216 K
IRF1010EHEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.International-Rectifier-3-55°C175°C195 K
IRF1010ELHEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.International-Rectifier-3-55°C175°C123 K
IRF1010ESHEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.International-RectifierDDPak3-55°C175°C123 K
K1010EPhotocoupler, CTR 50 to 600%. for registers, copiers, automatic vending machines, communications, telephone, etcdistributorDIP4-30°C100°C824 K
ZXCT1010E5Enhanced high-side current monitorZetex-SemiconductorSOT5-40°C85°C304 K
ZXCT1010E5Enhanced high-side current monitorZetex-SemiconductorSOT5-40°C85°C304 K
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