| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CXG1010N | Power Amplifier for PHS | Sony-Semiconductor | - | - | - | - | 218 K |
| IRF1010N | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | International-Rectifier | - | 3 | -55°C | 175°C | 211 K |
| IRF1010NL | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | International-Rectifier | - | 3 | -55°C | 175°C | 146 K |
| IRF1010NS | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A. | International-Rectifier | DDPak | 3 | -55°C | 175°C | 146 K |
| IRFI1010N | HEXFET power MOSFET. VDSS =55V, RDS(on) = 0.012 Ohm, ID = 49 A | International-Rectifier | - | 3 | -55°C | 175°C | 109 K |
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