| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FM27C010N120 | 1M-Bit (128K x 8) High Performance CMOS EPROM | Fairchild-Semiconductor | MDIP | 32 | - | - | 109 K |
| HGT1S10N120BNS | 35A, 1200V, NPT Series N-Channel IGBT | Fairchild-Semiconductor | - | - | - | - | 217 K |
| HGT1S10N120BNS | 35A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 81 K |
| HGTG10N120BN | 35A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 81 K |
| HGTG10N120BND | 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Fairchild-Semiconductor | - | - | - | - | 110 K |
| HGTG10N120BND | 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 82 K |
| HGTP10N120BN | 35A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 81 K |
| MHPM6B10N120SS | Hybrid power module | Motorola | ISSUE A | 17 | -40°C | 150°C | 265 K |
| NM27C010N120 | 1 Meg (128K x 8) High Perfomance CMOS EPROM | Fairchild-Semiconductor | MDIP | 32 | - | - | 117 K |
| RFM10N12 | 10.0A, 120V and 150V, 0.300 ohm, N-Channel Power MOSFET FN1445.2 | Intersil-Corporation | - | - | - | - | 40 K |
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