| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTP10N40E1 | 10A, 12A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 38 K |
| HGTP10N40E1 | 10A, 12A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 38 K |
| HGTP10N40E1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | Intersil-Corporation | - | - | - | - | 37 K |
| MTB10N40E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 273 K |
| MTP10N40E | TMOS E-FET high energy power FET | Motorola | - | 4 | -65°C | 150°C | 249 K |
| MTP10N40E | TMOS E-FET high energy power FET | Motorola | - | 4 | -65°C | 150°C | 249 K |
| PHB10N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 90 K |
| PHP10N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 90 K |
| PHW10N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 90 K |
| PHX10N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 74 K |
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