| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTD10N50F1S | 10A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 33 K |
| HGTP10N50C1 | 10A, 12A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 38 K |
| HGTP10N50C1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | Intersil-Corporation | - | - | - | - | 37 K |
| HGTP10N50E1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | Intersil-Corporation | - | - | - | - | 37 K |
| HGTP10N50E1HGTH12N40C1 | 10A, 12A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 38 K |
| HGTP10N50F1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | Intersil-Corporation | - | - | - | - | 34 K |
| RFH10N50 | 10.0A, 450V and 500V, 0.600 ohm, N-Channel Power MOSFET FN1629.2 | Intersil-Corporation | - | - | - | - | 32 K |
| RFM10N50 | 10.0A, 450V and 500V, 0.600 ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 31 K |
| RFV10N50BE | 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs | Intersil-Corporation | - | - | - | - | 66 K |
| SM5610N5S | IC for quartz crystal oscillating module | distributor | SOP | 8 | -40°C | 85°C | 150 K |
| 1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
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