| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AM28F512-200JC | 512 kilobit CMOS 12.0 volt, bulk erase flash memory with embedded algorithms | AMD-Advanced-Micro-Devices | PLCC | 32 | 0°C | 70°C | 484 K |
| AM28F512-200JCB | 512 kilobit CMOS 12.0 volt, bulk erase flash memory with embedded algorithms | AMD-Advanced-Micro-Devices | PLCC | 32 | 0°C | 70°C | 484 K |
| AM28F512-200PCB | 512 kilobit CMOS 12.0 volt, bulk erase flash memory with embedded algorithms | AMD-Advanced-Micro-Devices | PDIP | 32 | 0°C | 70°C | 484 K |
| AM28F512-200PE | 512 kilobit CMOS 12.0 volt, bulk erase flash memory with embedded algorithms | AMD-Advanced-Micro-Devices | PDIP | 32 | -55°C | 125°C | 484 K |
| AM28F512-200PEB | 512 kilobit CMOS 12.0 volt, bulk erase flash memory with embedded algorithms | AMD-Advanced-Micro-Devices | PDIP | 32 | -55°C | 125°C | 484 K |
| AM28F512-200PI | 512 kilobit CMOS 12.0 volt, bulk erase flash memory with embedded algorithms | AMD-Advanced-Micro-Devices | PDIP | 32 | -40°C | 85°C | 484 K |
| AM28F512-200PIB | 512 kilobit CMOS 12.0 volt, bulk erase flash memory with embedded algorithms | AMD-Advanced-Micro-Devices | PDIP | 32 | -40°C | 85°C | 484 K |
| BYM12-200 | Surface Mount Glass Passivated Junction Fast Efficient Rectifier | General-Semiconductor | - | - | - | - | 65 K |
| M48Z12-200PC1 | 16 KBIT (2KB X 8) ZEROPOWER SRAM | SGS-Thomson-Microelectronics | - | - | - | - | 85 K |
| M48Z12-200PC1 | 16 KBIT (2KB X 8) ZEROPOWER SRAM | SGS-Thomson-Microelectronics | - | - | - | - | 85 K |
| 1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
|---|
