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1261

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2SB1261Silicon power transistorNEC-Electronics-Inc-----295 K
2SB1261-ZSilicon power transistorNEC-Electronics-Inc-----295 K
2SD1261Silicon NPN triple diffusion planar type Darlington power transistorPanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----64 K
2SD1261ASilicon NPN triple diffusion planar type Darlington power transistorPanasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation----64 K
CXD1261ARSync Signal,Timing Signal Generator for CCDCamerasSony-Semiconductor----327 K
LTC1261Switched Capacitor Regulated Voltage InverterLinear-Technology----310 K
LTC1261LSwitched Capacitor Regulated Voltage InverterLinear-Technology----182 K
TM1261S-LTriacSanken-Electric-Co-----61 K
TM1261S-RTriacSanken-Electric-Co-----64 K
VTE1261GaAlAs infrared emitting diode. Irradiance(typ) 3.9 mW/cm2 (distance 36 mm, diameter 6.4 mm).distributor-2-40°C100°C40 K
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