Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SB1261 | Silicon power transistor | NEC-Electronics-Inc- | - | - | - | - | 295 K |
2SB1261-Z | Silicon power transistor | NEC-Electronics-Inc- | - | - | - | - | 295 K |
2SD1261 | Silicon NPN triple diffusion planar type Darlington power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 64 K |
2SD1261A | Silicon NPN triple diffusion planar type Darlington power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 64 K |
CXD1261AR | Sync Signal,Timing Signal Generator for CCDCameras | Sony-Semiconductor | - | - | - | - | 327 K |
LTC1261 | Switched Capacitor Regulated Voltage Inverter | Linear-Technology | - | - | - | - | 310 K |
LTC1261L | Switched Capacitor Regulated Voltage Inverter | Linear-Technology | - | - | - | - | 182 K |
TM1261S-L | Triac | Sanken-Electric-Co- | - | - | - | - | 61 K |
TM1261S-R | Triac | Sanken-Electric-Co- | - | - | - | - | 64 K |
VTE1261 | GaAlAs infrared emitting diode. Irradiance(typ) 3.9 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 40 K |
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