| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA1262 | Transistor For General Purpose | Sanken-Electric-Co- | - | - | - | - | 23 K |
| 2SD1262 | Silicon NPN triple diffusion planar type Darlington power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 64 K |
| 2SD1262A | Silicon NPN triple diffusion planar type Darlington power transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 64 K |
| CXA1262N | Pre-amplifier/Power-amplifier for Tape Recorder | Sony-Semiconductor | - | - | - | - | 203 K |
| KGF1262 | Medium-power amplifier | distributor | PSOP | 4 | - | - | 141 K |
| LTC1262 | 12V, 30mA Flash Memory Programming Supply | Linear-Technology | - | - | - | - | 220 K |
| TC1262-33VEBTR | 500mA fixed output CMOS LDO, 3.3V | Microchip-Technology-Inc- | DDPAK | 3 | -40°C | 125°C | 461 K |
| TM1262B-R | Triac | Sanken-Electric-Co- | - | - | - | - | 50 K |
| UFT12620 | Ultra Fast Rectifier (less than 100ns) | Microsemi-Corporation | MD3CC | - | - | - | 235 K |
| VTE1262 | GaAlAs infrared emitting diode. Irradiance(typ) 5.2 mW/cm2 (distance 36 mm, diameter 6.4 mm). | distributor | - | 2 | -40°C | 100°C | 40 K |
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