| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTP15N06V | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 163 K |
| MTP15N06VL | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 216 K |
| MTP15N06VL | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 216 K |
| RFD15N06LE | 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 95 K |
| RFD15N06LESM | 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 95 K |
| RFP15N06L | 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 40 K |
| STD15N06 | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 168 K |
| STD15N06L | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 140 K |
| STP15N06L | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 196 K |
| STP15N06LFI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 196 K |
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