Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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50S116T-5 | High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA | distributor | TSOP | 50 | 0°C | 70°C | 1 M |
54S416T-5 | High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA | distributor | TSOP | 54 | 0°C | 70°C | 1 M |
X20C16T-55 | 16K (2K x 8bit) high-speed autostore NOVRAM | distributor | TSOP32 | 32 | 0°C | 70°C | 94 K |
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