Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SC1906 | Small signal high frequency amplifier transistor | distributor | - | - | - | - | 45 K |
2SD1906 | NPN epitaxial planar silicon transistor, high-current switching application | SANYO-Electric-Co--Ltd- | 2049B | 3 | - | - | 121 K |
2SK1906 | N-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2063 | 3 | - | - | 84 K |
JM38510/11906BC | Wide Bandwidth Quad JFET Input Operational Amplifiers | distributor | Cerdip | 14 | - | - | 406 K |
JM38510/11906BCA | QUAD LOW-NOISE JFET-INPUT GENERAL-PURPOSE OPERATIONAL AMPLIFIER | Texas-Instruments | J | 14 | -55°C | 125°C | 281 K |
JM38510/11906BCA | QUAD LOW-NOISE JFET-INPUT GENERAL-PURPOSE OPERATIONAL AMPLIFIER | Texas-Instruments | J | 14 | -55°C | 125°C | 281 K |
KHB1906A01 | PHS | Korea-Electronics-Co--Ltd- | - | - | - | - | 14 K |
LET19060C | RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY | SGS-Thomson-Microelectronics | - | - | - | - | 34 K |
NTE1906 | Integrated circuit. 3 terminal positive voltage regulator, 18V, 100mA. | distributor | TO92 | 3 | 0°C | 70°C | 22 K |
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