| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA1961 | Small signal silicon PNP transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 37 K |
| 2SK1961 | N-channel junction silicon FET, high-frequency low-noise amp application | SANYO-Electric-Co--Ltd- | 2019A | 3 | - | - | 128 K |
| CXD1961AQ | DVB-S Frontend IC(QPSK demodulation+FEC) | Sony-Semiconductor | - | - | - | - | 294 K |
| CXD1961Q | DVB-S Front-end IC (QPSK demodulator + FEC) | Sony-Semiconductor | - | - | - | - | 217 K |
| ES51961 | 3 3/4 manu DMM | distributor | QFP | 100 | 0°C | 70°C | 447 K |
| G1961 | Active area size:1.1x1.1mm; reverse voltage:5V; GaP photodiode. Schottky type. For analytical instruments, UV detection | distributor | - | 2 | -30°C | 80°C | 158 K |
| KV1961A | Tuning Varactors | Microsemi-Corporation | SEE_FACTORY | - | - | - | 58 K |
| NTE1961 | Integrated circuit. Negative 3 terminal voltage regulator, Vout = -5.0V, Test conditions: Io = 0.5A. | distributor | TO220 | 3 | -30°C | 75°C | 29 K |
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