| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1SS345 | Silicon epitaxial schottky barrier diode, UHF detector, mixer application | SANYO-Electric-Co--Ltd- | 1148A | 3 | - | - | 62 K |
| 1SS348 | Scottky barrier diode for low voltage high speed switching applications | Toshiba | - | 3 | -40°C | 100°C | 110 K |
| 1SS349 | Scottky barrier diode for low voltage high speed switching applications | Toshiba | - | 3 | -40°C | 100°C | 109 K |
| 1SS350 | Silicon epitaxial schottky barrier diode, UHF detector, mixer application | SANYO-Electric-Co--Ltd- | 1148A | 3 | - | - | 57 K |
| 1SS351 | Silicon epitaxial schottky barrier diode, UHF detector, mixer application | SANYO-Electric-Co--Ltd- | 1147A | 3 | - | - | 56 K |
| 1SS352 | Silicon diode for ultra high speed switching applications | Toshiba | - | 2 | -55°C | 125°C | 121 K |
| 1SS358 | Schottky barrier diode, VHF, UHF detector, mixer application | SANYO-Electric-Co--Ltd- | 1251A | 3 | - | - | 55 K |
| 1SS385 | Schottky barrier diode for high speed switching applications | Toshiba | - | 3 | -40°C | 100°C | 124 K |
| 1SS387 | Silicon diode for ultra high speed switching applications | Toshiba | - | 2 | -55°C | 125°C | 125 K |
| 1SS388 | Schottky barrier diode for high speed switching applications | Toshiba | - | 2 | -40°C | 100°C | 123 K |
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