| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1MB12-140 | Insulated gate bipolar transistor (IGBT) | distributor | - | 3 | - | - | 118 K |
| CS52-14A | High voltage silicon rectifiers | distributor | - | 2 | -65°C | 150°C | 32 K |
| CX06832-14 | V34/group 3 high performance fax modem family | distributor | PQFP | 100 | 0°C | 70°C | 92 K |
| CY7C1352-143AC | 256K x18 Pipelined SRAM with NoBL Architecture | Cypress-Semiconductor | - | - | - | - | 185 K |
| ESJA52-14A | High voltage silicon diode | distributor | - | 2 | - | - | 148 K |
| ESJA82-14A | High voltage silicon diode | distributor | - | 2 | - | - | 137 K |
| LC11012-141 | Computer image signal processing full-color grayscale processor | SANYO-Electric-Co--Ltd- | QFP64E | 64 | 0°C | 70°C | 171 K |
| M4A3-384/192-14AI | 14ns, 3.3V high performance E2 CMOS in-system programmable logic | Lattice-Semiconductor-Corporation | BGA | 256 | -40°C | 85°C | 1 M |
| M4A3-384/192-14FAI | 14ns, 3.3V high performance E2 CMOS in-system programmable logic | Lattice-Semiconductor-Corporation | BGA | 256 | -40°C | 85°C | 1 M |
| RGP02-14E | Glass Passivated Junction Fast Switching Rectifier | General-Semiconductor | GP10E | - | - | - | 60 K |
| 1 [2] [3] [4] [5] [6] [7] [8] [9] |
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