| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTD20N06HD | HDTMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 274 K |
| MTD20N06HDL | HDTMOS E-FET high density power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 293 K |
| MTD20N06V | TMOS V power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 175°C | 257 K |
| MTP20N06V | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 209 K |
| PHD20N06T | 55 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 307 K |
| PHP20N06T | 55 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 334 K |
| STD20N06 | TRANSISTOR MOSFET TO-252 | SGS-Thomson-Microelectronics | - | - | - | - | 174 K |
| STP20N06 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 205 K |
| STP20N06 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 205 K |
| STP20N06FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 205 K |
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