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20n120d

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IXDH20N120D11200V high voltage IGBT with optional diodedistributor-3-55°C150°C74 K
MGY20N120DInsulated gate bipolar transistorMotorola-3-55°C150°C254 K
MGY20N120DInsulated gate bipolar transistorMotorola-3-55°C150°C254 K
MGY20N120DInsulated Gate Bipolar Transistor with Anti-Parallel Diode N-ChannelON-Semiconductor-3--171 K
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