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20n50

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
HGTG20N50C1D20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast DiodeIntersil-Corporation----33 K
HGTH20N50C115A, 20A, 400V and 500V N-Channel IGBTsIntersil-Corporation----35 K
HGTH20N50C1D20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast DiodesIntersil-Corporation----35 K
HGTH20N50E1D20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast DiodesIntersil-Corporation----35 K
MTV20N50ETMOS E-FET power field effect transistor D3PAK for surface mountMotorolaDPAK4-55°C150°C273 K
MTW20N50ETMOS E-FET power field effect transistor TO-247 with isolated mounting holeMotorola-4-55°C150°C193 K
R1120N501A-TLLow noise 150mA LDO regulator. Output voltage 5.0V. L active type. Taping specification TL.distributor-5-40°C85°C187 K
R1120N501A-TLLow noise 150mA LDO regulator. Output voltage 5.0V. L active type. Taping specification TL.distributor-5-40°C85°C187 K
R1120N501A-TRLow noise 150mA LDO regulator. Output voltage 5.0V. "L" active type. Standard taping specification TRdistributor-5-40°C85°C187 K
R1120N501B-TRLow noise 150mA LDO regulator. Output voltage 5.0V. "H" active type. Standard taping specification TR.distributor-5-40°C85°C187 K
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