Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BC212L | ft min 200 MHz hfe min 60 Transistor polarity PNP Current Ic continuous max 0.2 A Voltage Vcbo 60 V Voltage Vceo 50 V Current Ic (hfe) 2 mA Power Ptot 625 mW | Fairchild-Semiconductor | - | - | - | - | 313 K |
BC212L | 300mW PNP silicon planar epitaxial transistor | distributor | - | 3 | -55°C | 150°C | 62 K |
FP212L100-22 | Differential magnetoresistive sensor | Infineon-formely-Siemens | - | 3 | -40°C | 140°C | 217 K |
MC10212L | High speed 3-input/3-output NOR gate | Motorola | DIP | 16 | - | - | 103 K |
MMUN2212LT1 | 50 V, bias resistor transistor | distributor | - | 3 | -65°C | 150°C | 146 K |
MMUN2212LT1 | 50 V, bias resistor transistor | distributor | - | 3 | -65°C | 150°C | 146 K |
MMUN2212LT1 | Bias Resistor Transistor | ON-Semiconductor | - | 3 | - | - | 175 K |
MMUN2212LT3 | Bias Resistor Transistor | ON-Semiconductor | - | 3 | - | - | 175 K |
PHP212L | Dual P-channel enhancement mode MOS transistor. | Philips-Semiconductors | - | 8 | -55°C | 150°C | 62 K |
UPD78212L-XXX | 8-bit single-chip microcomputer | NEC-Electronics-Inc- | - | - | - | - | 2 M |
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