Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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JM38510/32102B2A | QUADRUPLE 2-INPUT HIGH-VOLTAGE INTERFACE POSITIVE-NAND GATES | Texas-Instruments | FK | 20 | -55°C | 125°C | 90 K |
JM38510/32102B2A | QUADRUPLE 2-INPUT HIGH-VOLTAGE INTERFACE POSITIVE-NAND GATES | Texas-Instruments | FK | 20 | -55°C | 125°C | 90 K |
JM38510/32102BCA | QUADRUPLE 2-INPUT HIGH-VOLTAGE INTERFACE POSITIVE-NAND GATES | Texas-Instruments | J | 14 | -55°C | 125°C | 90 K |
JM38510/32102BCA | QUADRUPLE 2-INPUT HIGH-VOLTAGE INTERFACE POSITIVE-NAND GATES | Texas-Instruments | J | 14 | -55°C | 125°C | 90 K |
JM38510/32102BDA | QUADRUPLE 2-INPUT HIGH-VOLTAGE INTERFACE POSITIVE-NAND GATES | Texas-Instruments | W | 14 | -55°C | 125°C | 90 K |
JM38510/32102BDA | QUADRUPLE 2-INPUT HIGH-VOLTAGE INTERFACE POSITIVE-NAND GATES | Texas-Instruments | W | 14 | -55°C | 125°C | 90 K |
PHC21025 | Complementary enhancement mode MOS transistors | Philips-Semiconductors | SOT96 | - | - | - | 161 K |
TPS2102D | POWER-DISTRIBUTION SWITCHES | Texas-Instruments | D | 8 | - | - | 265 K |
TPS2102DBVR | POWER-DISTRIBUTION SWITCHES | Texas-Instruments | DBV | 5 | - | - | 265 K |
TPS2102DBVT | POWER-DISTRIBUTION SWITCHES | Texas-Instruments | DBV | 5 | - | - | 265 K |
TPS2102DR | POWER-DISTRIBUTION SWITCHES | Texas-Instruments | D | 8 | - | - | 265 K |
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