Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AS6UA25616-BC | 2.3V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable | Alliance-Semiconductor-Corporation | CSP BGA | 48 | 0°C | 70°C | 190 K |
AS6UA25616-BI | 2.3V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable | Alliance-Semiconductor-Corporation | CSP BGA | 48 | -40°C | 85°C | 190 K |
AS6UA25616-TC | 2.3V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable | Alliance-Semiconductor-Corporation | TSOPII | 44 | 0°C | 70°C | 190 K |
AS6UA25616-TI | 2.3V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable | Alliance-Semiconductor-Corporation | TSOP | 44 | -40°C | 85°C | 190 K |
AS6VA25616-BC | 2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable | Alliance-Semiconductor-Corporation | CSP BGA | 48 | 0°C | 70°C | 180 K |
AS6VA25616-BC | 2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable | Alliance-Semiconductor-Corporation | CSP BGA | 48 | 0°C | 70°C | 180 K |
AS6VA25616-TC | 2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable | Alliance-Semiconductor-Corporation | TSOPII | 44 | 0°C | 70°C | 180 K |
HYB39S256160T-10 | 256Mbit Synchronous DRAM | Infineon-formely-Siemens | - | 54 | 0°C | 70°C | 425 K |
HYB39S256160T-8 | 256Mbit Synchronous DRAM | Infineon-formely-Siemens | - | 54 | 0°C | 70°C | 425 K |
HYB39S256160T-8B | 256Mbit Synchronous DRAM | Infineon-formely-Siemens | - | 54 | 0°C | 70°C | 425 K |
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