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25N12

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IXGH25N1201200V high speed IGBTdistributor-3-55°C150°C45 K
IXGH25N120A1200V high speed IGBTdistributor-3-55°C150°C45 K
IXSH25N120A1200V IGBTdistributor-3-55°C150°C32 K
IXSH25N120AU11200V fast recovery epitaxial diode (FRED)distributor-3-55°C150°C36 K
MGY25N120Insulated gate bipolar transistorMotorola-3-55°C150°C228 K
MGY25N120Insulated Gate Bipolar Transistor N-ChannelON-Semiconductor-3--153 K
MGY25N120DInsulated gate bipolar transistorMotorola-3-55°C150°C256 K
MGY25N120DInsulated Gate Bipolar Transistor with Anti-Parallel Diode N-ChannelON-Semiconductor-3--171 K
MHPM6B25N120SLHybrid power moduleMotorolaISSUE A17-40°C150°C265 K
MHPM6B25N120SSHybrid power moduleMotorolaISSUE A17-40°C150°C265 K
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