| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AS29F040-90LC | 5V 512K x 8 CMOS flash EEPROM, access time 90ns | Alliance-Semiconductor-Corporation | PLCC | 32 | 0°C | 70°C | 341 K |
| AS29F040-90LI | 5V 512K x 8 CMOS flash EEPROM, access time 90ns | Alliance-Semiconductor-Corporation | PLCC | 32 | -40°C | 85°C | 341 K |
| AS29F040-90TC | 5V 512K x 8 CMOS flash EEPROM, access time 90ns | Alliance-Semiconductor-Corporation | TSOP | 32 | 0°C | 70°C | 341 K |
| AS29F040-90TI | 5V 512K x 8 CMOS flash EEPROM, access time 90ns | Alliance-Semiconductor-Corporation | TSOP | 32 | -40°C | 85°C | 341 K |
| EN29F040-90J | 4 Megabit (512K x 8-bit) flach memory. Speed 90ns. 5.0V operation for read/write/erase operations. | distributor | PLCC | 32 | 0°C | 70°C | 223 K |
| EN29F040-90JI | 4 Megabit (512K x 8-bit) flach memory. Speed 90ns. 5.0V operation for read/write/erase operations. | distributor | PLCC | 32 | -40°C | 85°C | 223 K |
| EN29F040-90P | 4 Megabit (512K x 8-bit) flach memory. Speed 90ns. 5.0V operation for read/write/erase operations. | distributor | PDIP | 32 | 0°C | 70°C | 223 K |
| EN29F040-90PI | 4 Megabit (512K x 8-bit) flach memory. Speed 90ns. 5.0V operation for read/write/erase operations. | distributor | PDIP | 32 | -40°C | 85°C | 223 K |
| EN29F040-90T | 4 Megabit (512K x 8-bit) flach memory. Speed 90ns. 5.0V operation for read/write/erase operations. | distributor | TSOP | 32 | 0°C | 70°C | 223 K |
| EN29F040-90TI | 4 Megabit (512K x 8-bit) flach memory. Speed 90ns. 5.0V operation for read/write/erase operations. | distributor | TSOP | 32 | -40°C | 85°C | 223 K |
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