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2N06

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
RFD12N06RLE12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETsIntersil-Corporation----49 K
RFL2N062A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETsIntersil-Corporation----44 K
RFL2N06L2A, 60V, 0.950 Ohm, Logic Level, N-Channel Power MOSFETIntersil-Corporation----306 K
STD12N06N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----177 K
STD12N06LN-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----176 K
STK12N06LN-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----180 K
STK22N06N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----183 K
STN2N06N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSGS-Thomson-Microelectronics----86 K
STP32N06LN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----201 K
STP32N06LFIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----201 K
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