| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFBA22N50A | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.23 Ohm, ID = 24A | International-Rectifier | - | 3 | -40°C | 175°C | 106 K |
| IRFP22N50A | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.23 Ohm, ID = 22A. | International-Rectifier | - | 3 | -55°C | 150°C | 103 K |
| MSAER12N50A | N Channel MOSFET | Microsemi-Corporation | CoolPack1 | - | - | - | 48 K |
| MSAFR12N50A | N Channel MOSFET | Microsemi-Corporation | CoolPack1 | - | - | - | 48 K |
| R1112N50A-TL | Low noise 150mA LDO regulator. Output voltage 5.0V. Active low type. Taping type TL | distributor | - | 5 | -40°C | 85°C | 244 K |
| R1112N50A-TR | Low noise 150mA LDO regulator. Output voltage 5.0V. Active low type. Standard taping type TR | distributor | - | 5 | -40°C | 85°C | 244 K |
| R3112N50A-TR | Low voltage detector with output delay. Output voltage 5.0V. Output type Nch open drain. Standard taping type TR. | distributor | - | 5 | -40°C | 85°C | 267 K |
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