| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SJ201 | Silicon P channel field effect transistor for high power amplifier applications | Toshiba | - | 3 | -55°C | 150°C | 182 K |
| 2SJ217 | Power switching MOSFET | distributor | - | - | - | - | 49 K |
| 2SJ221 | Power switching MOSFET | distributor | - | - | - | - | 48 K |
| 2SJ222 | Power switching MOSFET | distributor | - | - | - | - | 34 K |
| 2SJ244 | Power switching MOSFET | distributor | UPAK | - | - | - | 45 K |
| 2SJ247 | Power switching MOSFET | distributor | - | - | - | - | 47 K |
| 2SJ248 | Power switching MOSFET | distributor | - | - | - | - | 33 K |
| 2SJ272 | P-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2063 | 3 | - | - | 81 K |
| 2SJ273 | P-channel MOS silicon FET, very high-speed switching application | SANYO-Electric-Co--Ltd- | 2063A | 3 | - | - | 82 K |
| 2SJ278 | Power switching MOSFET | distributor | UPAK | - | - | - | 42 K |
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