Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SC2206 | Silicon NPN epitaxial planer type small signal transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 53 K |
2SC2223-L | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 222 K |
2SC2223-T1B | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 222 K |
2SC2223-T2B | Silicon transistor | NEC-Electronics-Inc- | - | - | - | - | 222 K |
2SC2233 | 4Ampere NPN silicon power transistor | distributor | - | 3 | -55°C | 150°C | 120 K |
2SC2233 | NPN epitaxial silicon transistor. Low frequency power amplifier | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 65 K |
2SC2240 | Silicon NPN transistor for low noise audio amplifier applications. Recommended for the first stages of Equalizer amplifiers | Toshiba | - | 3 | -55°C | 125°C | 226 K |
2SC2275 | NPN epitaxial silicon transistor. Low frequency power amplifier | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 70 K |
2SC2290 | Silicon NPN transistor for 2-30MHz SSB linear power amplifier applications (low supply voltage use) | Toshiba | - | 4 | -65°C | 175°C | 140 K |
2SC2295 | Silicon NPN epitaxial planer type small signal transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 51 K |
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