| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC3607 | Silicon NPN transistor for VHF-UHF band low noise amplifier applications | Toshiba | - | 3 | -55°C | 125°C | 315 K |
| 2SC3619 | Silicon NPN transistor for high voltage switching and amplifier applications, color TV horizontal driver and color TV chroma output applications | Toshiba | - | 3 | -55°C | 150°C | 192 K |
| 2SC3645 | NPN epitaxial planar silicon transistor, high-voltage switching, predriver application | SANYO-Electric-Co--Ltd- | 2038 | 3 | - | - | 108 K |
| 2SC3647 | NPN epitaxial planar silicon transistor, high-voltage switching application | SANYO-Electric-Co--Ltd- | 2038 | 3 | - | - | 126 K |
| 2SC3648 | NPN epitaxial planar silicon transistor, high-voltage switching, predriver application | SANYO-Electric-Co--Ltd- | 2038 | 3 | - | - | 113 K |
| 2SC3649 | NPN epitaxial planar silicon transistor, high-voltage switching application | SANYO-Electric-Co--Ltd- | 2038 | 3 | - | - | 127 K |
| 2SC3650 | NPN epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application | SANYO-Electric-Co--Ltd- | 2038 | 3 | - | - | 91 K |
| 2SC3651 | NPN epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application | SANYO-Electric-Co--Ltd- | 2038 | 3 | - | - | 83 K |
| 2SC3661 | NPN epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application | SANYO-Electric-Co--Ltd- | 2018A | 3 | - | - | 76 K |
| 2SC3689 | NPN epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application | SANYO-Electric-Co--Ltd- | 2018A | 3 | - | - | 77 K |
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