| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SK1062 | Silicon N channel field effect transistor for high speed switching applications, analog switch applications and interface applications | Toshiba | - | 3 | -55°C | 150°C | 192 K |
| 2SK1065 | N-channel junction silicon FET, high-frequency general-purpose amp application | SANYO-Electric-Co--Ltd- | 2057 | 3 | - | - | 107 K |
| 2SK1066 | N-channel junction silicon FET, high-frequency general-purpose amp application | SANYO-Electric-Co--Ltd- | 2058 | 3 | - | - | 210 K |
| 2SK1067 | N-channel MOS silicon FET, FM tuner, VHF-band amp application | SANYO-Electric-Co--Ltd- | 2057 | 3 | - | - | 109 K |
| 2SK1068 | N-channel junction silicon FET, impedance conversion application | SANYO-Electric-Co--Ltd- | 2058 | 3 | - | - | 80 K |
| 2SK1069 | N-channel junction silicon FET, low-frequency general-purpose amp application | SANYO-Electric-Co--Ltd- | 2058 | 3 | - | - | 84 K |
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