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30ud

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4BC30UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12AInternational-Rectifier-3-55°C150°C234 K
IRG4PC30UDInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.95V @ VGE = 15V, IC = 12AInternational-Rectifier-3-55°C150°C211 K
IRGB430UD2Insulated gate bipolar transistorInternational-Rectifier-3-55°C150°C425 K
IRGBC30UD2Insulated gate bipolar transistor with ultrafast soft reconery diodeInternational-Rectifier-3-55°C150°C413 K
IRGP430UD2Insulated gate bipolar transistor with ultrafast soft recovery diodeInternational-Rectifier-3-55°C150°C426 K
IRGPC30UD2Insulated gate bipolar transistor with ultrafast soft recovery diodeInternational-Rectifier-3-55°C150°C419 K
IRGPC30UD2Insulated gate bipolar transistor with ultrafast soft recovery diodeInternational-Rectifier-3-55°C150°C419 K
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