| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SJ353-T | P-channel MOS-type silicon field effect transistor (-60 | NEC-Electronics-Inc- | - | - | - | - | 58 K |
| 2SK3353-S | Nch power MOS FET | NEC-Electronics-Inc- | - | - | - | - | 43 K |
| 2SK3353-S | Nch power MOS FET | NEC-Electronics-Inc- | - | - | - | - | 43 K |
| 2SK3353-Z | Nch power MOS FET | NEC-Electronics-Inc- | - | - | - | - | 43 K |
| 2SK3353-Z | Nch power MOS FET | NEC-Electronics-Inc- | - | - | - | - | 43 K |
| CY7C1353-40AC | 256Kx18 Flow-Through SRAM with NoBL Architecture | Cypress-Semiconductor | - | - | - | - | 236 K |
| CY7C1353-50AC | 256Kx18 Flow-Through SRAM with NoBL Architecture | Cypress-Semiconductor | - | - | - | - | 236 K |
| CY7C1353-66AC | 256Kx18 Flow-Through SRAM with NoBL Architecture | Cypress-Semiconductor | - | - | - | - | 236 K |
| PS21353-G | 600V, 10A six pac IGBT module | distributor | - | - | - | - | 89 K |
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