| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SC3576 | NPN epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application | SANYO-Electric-Co--Ltd- | 2033 | 3 | - | - | 84 K |
| BA3576FS | Low-current consumption headphone driver for digital audio | ROHM | - | 20 | -15°C | 60°C | 139 K |
| IDT71V35761S200BQ | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 200MHz | Integrated-Device-Technology-Inc- | FBGA | 165 | 0°C | 70°C | 282 K |
| IDT71V35761S200BQ | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 200MHz | Integrated-Device-Technology-Inc- | FBGA | 165 | 0°C | 70°C | 282 K |
| IDT71V35761SA166BGI | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 166MHz | Integrated-Device-Technology-Inc- | BGA | 119 | -40°C | 85°C | 282 K |
| IDT71V35761SA166BQI | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 166MHz | Integrated-Device-Technology-Inc- | FBGA | 165 | -40°C | 85°C | 282 K |
| IDT71V35761SA183BQI | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 183MHz | Integrated-Device-Technology-Inc- | FBGA | 165 | -40°C | 85°C | 282 K |
| IDT71V35761SA200BQ | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 200MHz | Integrated-Device-Technology-Inc- | FBGA | 165 | 0°C | 70°C | 282 K |
| IDT71V35761SA200BQ | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 200MHz | Integrated-Device-Technology-Inc- | FBGA | 165 | 0°C | 70°C | 282 K |
| IDT71V35761YSA183BQI | 128K x 36, 3.3V synchronous SRAM burst counter, single cycle deselect, 183MHz | Integrated-Device-Technology-Inc- | FBGA | 165 | -40°C | 85°C | 282 K |
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