| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTB36N06E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 278 K |
| MTB36N06V | TMOS V power field effect transistor | Motorola | DPAK | 4 | -55°C | 175°C | 241 K |
| MTP36N06V | TMOS V power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 188 K |
| PHB36N06E | 60 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 55 K |
| PHB36N06E | 60 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 55 K |
| PHP36N06E | 60 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 51 K |
| STP36N06 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
| STP36N06FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
| STP36N06L | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 204 K |
| STP36N06LFI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 204 K |
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