| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTB3N60E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 74 K |
| MTP3N60E | TMOS E-FET high energy power FET | Motorola | - | 4 | -55°C | 150°C | 183 K |
| PHP3N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 79 K |
| PHP3N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO220AB | 3 | -55°C | 150°C | 80 K |
| PHX3N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 73 K |
| PHX3N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 73 K |
| PHX3N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT186A | 3 | -55°C | 150°C | 73 K |
| PHX3N60E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT186A | 3 | -55°C | 150°C | 73 K |
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