Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MTB40N10E | TMOS E-FET power field effect transistor | Motorola | DPAK | 4 | -55°C | 150°C | 192 K |
MTP40N10E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 160 K |
NM27C040N100 | 4,194,304 Bit (512K x 8) High Performance CMOS EPROM | Fairchild-Semiconductor | MDIP | 32 | - | - | 111 K |
NM27C240N100 | 4 Meg (256K x 16) High Performance CMOS EPROM [Life-time buy] | Fairchild-Semiconductor | MDIP | 40 | - | - | 96 K |
RF1S40N10SM | 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 51 K |
RFG40N10 | 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 51 K |
RFG40N10LE | 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 413 K |
RFP40N10 | 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 51 K |
RFP40N10 | 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 51 K |
RFP40N10LE | 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 413 K |
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