| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MAX4074BAESA | Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 10V/V, noniverting gain 11V/V, -3dB BW 79kHZ. | Maxim-Integrated-Producs | SO | 8 | -40°C | 70°C | 412 K |
| MAX4074BAEUK-T | Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 10/V, noniverting gain 11V/V, -3dB BW 79kHZ. | Maxim-Integrated-Producs | - | 5 | -40°C | 70°C | 412 K |
| MAX4174BAEUK-T | Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 10, 1+ (Rf/Dg) noninverting gain 11, -3dB BW 560kHz. | Maxim-Integrated-Producs | - | 5 | -40°C | 85°C | 298 K |
| MAX4274BAESA | Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 10, 1+ (Rf/Dg) noninverting gain 11, -3dB BW 560kHz. | Maxim-Integrated-Producs | SO | 8 | -40°C | 85°C | 298 K |
| MAX4274BAEUA | Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 10, 1+ (Rf/Dg) noninverting gain 11, -3dB BW 560kHz. | Maxim-Integrated-Producs | microMAX | 8 | -40°C | 85°C | 298 K |
| MH16S64BAMD-10 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 591 K |
| MH16S64BAMD-7 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 591 K |
| MH8S64BALD-10 | 536870912-bit (8388608-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 587 K |
| MH8S64BALD-7 | 536870912-bit (8388608-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 587 K |
| MH8S64BALD-8 | 536870912-bit (8388608-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 587 K |
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