| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTG34N100E2 | 34A, 1000V N-Channel IGBT | Intersil-Corporation | - | - | - | - | 38 K |
| MSP50P34N16E1A | OTP DEVICE | Texas-Instruments | N | 16 | - | - | 142 K |
| MSP50P34N16I2D | OTP DEVICE | Texas-Instruments | N | 16 | - | - | 142 K |
| RF1S4N100SM | 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 45 K |
| RF1S4N100SM | 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 45 K |
| RFL4N12 | 4.0A, 120V and 150V, 0.400 ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 31 K |
| RFL4N15 | 4.0A, 120V and 150V, 0.400 ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 31 K |
| RFP4N100 | 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 45 K |
| STP4N100 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
| STP4N100FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 202 K |
| 1 [2] [3] [4] [5] [6] |
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