| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTP4N50E | TMOS E-FET high energy power FET | Motorola | - | 4 | -55°C | 150°C | 254 K |
| MTW14N50E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 205 K |
| PHP4N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 21 K |
| PHW14N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO247 | 3 | -55°C | 150°C | 27 K |
| PHW14N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT429 | 3 | -55°C | 150°C | 27 K |
| PHX4N50E | 500 V, power MOS transistor isolated version of PHP4N50E | Philips-Semiconductors | SOT | 3 | - | - | 24 K |
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