| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| A45L9332AE-6 | Cycle time:6ns; 166MHz CL=3 access time:5.5ns 256K x 32bit x 2banks synchronous graphic DRAM | distributor | LQFP | 100 | 0°C | 70°C | 1 M |
| A45L9332AE-7 | Cycle time:7ns; 143MHz CL=3 access time:6.0ns 256K x 32bit x 2banks synchronous graphic DRAM | distributor | LQFP | 100 | 0°C | 70°C | 1 M |
| A45L9332AE-8 | Cycle time:8ns; 125MHz CL=3 access time:6.5ns 256K x 32bit x 2banks synchronous graphic DRAM | distributor | LQFP | 100 | 0°C | 70°C | 1 M |
| A45L9332AF-6 | Cycle time:6ns; 166MHz CL=3 access time:5.5ns 256K x 32bit x 2banks synchronous graphic DRAM | distributor | QFP | 100 | 0°C | 70°C | 1 M |
| A45L9332AF-6 | 6ns; 166MHz CL=3 256K x 32bit x 2banks synchronous graphic RAM | distributor | QFP | 100 | 0°C | 70°C | 1 M |
| A45L9332AF-7 | Cycle time:7ns; 143MHz CL=3 access time:6.0ns 256K x 32bit x 2banks synchronous graphic DRAM | distributor | QFP | 100 | 0°C | 70°C | 1 M |
| A45L9332AF-7 | 7ns; 143MHz CL=3 256K x 32bit x 2banks synchronous graphic RAM | distributor | QFP | 100 | 0°C | 70°C | 1 M |
| A45L9332AF-7 | 7ns; 143MHz CL=3 256K x 32bit x 2banks synchronous graphic RAM | distributor | QFP | 100 | 0°C | 70°C | 1 M |
| A45L9332AF-8 | Cycle time:8ns; 125MHz CL=3 access time:6.5ns 256K x 32bit x 2banks synchronous graphic DRAM | distributor | QFP | 100 | 0°C | 70°C | 1 M |
| FP425L90 | Double differential magneto resistor | Infineon-formely-Siemens | - | 6 | -40°C | 175°C | 205 K |
| S5L9250B01-Q0R0 | CD-ROM 48X 1 chip | Samsung-Electronic | - | 128 | -20°C | 75°C | 1 M |
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