Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MTB75N05HD | HDTMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 254 K |
OM75N05SA | 50V ultra low power MOSFET | distributor | - | 3 | -55°C | 150°C | 74 K |
OM75N05SC | 50V ultra low power MOSFET | distributor | - | 3 | -55°C | 150°C | 74 K |
R05N05 | 1W DC/DC converter with 5V input, 5V/200mA output | distributor | DIP | 8 | -40°C | 85°C | 97 K |
RFG75N05E | 75A, 50V, 0.008 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 53 K |
RFP15N05L | 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 40 K |
RFP25N05 | 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 104 K |
RFP25N05L | 25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 47 K |
STP15N05L | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
STP15N05LFI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
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