Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HVP125N2000 | 2 mA, high voltage power supply | distributor | - | 3 | 0°C | 50°C | 165 K |
MTE125N20E | ISOTOP TMOS E-FET power field effect transistor | Motorola | SOT | 4 | -40°C | 150°C | 228 K |
MTY55N20E | TMOS E-FET power field effect transistor | Motorola | - | 3 | -55°C | 150°C | 231 K |
PHD5N20E | 200 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 55 K |
PHP5N20E | 200 V, power MOS transistor | Philips-Semiconductors | TO | 3 | -55°C | 175°C | 51 K |
RFK25N20 | 25.0A, 180V, 0.150 ohm, N-Channel Power MOSFET FN1500.3 | Intersil-Corporation | - | - | - | - | 42 K |
RFK25N20 | 25.0A, 180V, 0.150 ohm, N-Channel Power MOSFET FN1500.3 | Intersil-Corporation | - | - | - | - | 42 K |
SSP45N20B | 200V, 35A N-channel MOSFET | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 914 K |
SSS45N20B | 200V, 35A N-channel MOSFET | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 914 K |
STD5N20 | N-CHANNEL 200V - 7 OHM - 5A - TO-251/TO-252 POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 105 K |
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