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5N4

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AM035N4-0032-37 GHz GaAs MMIC ring hybrid mixerdistributor---55°C125°C57 K
HGTP15N40C115A, 20A, 400V and 500V N-Channel IGBTsIntersil-Corporation----35 K
HGTP15N40E115A, 20A, 400V and 500V N-Channel IGBTsIntersil-Corporation----35 K
IRF5N4905HEXFET power MOSFET surface mount. BVDSS = -50V, RDS(on) = 0.024 Ohm, ID = -55AInternational-Rectifier-3-55°C150°C119 K
MGB15N40CLT4Internally Clamped N-Channel IGBTON-SemiconductorD2PAK3--100 K
MGB15N43CLT4Internally Clamped N-Channel IGBTON-SemiconductorD2PAK3--70 K
MGP15N40CLInternally Clamped N-Channel IGBTON-Semiconductor-3--100 K
MGP15N43CLInternally Clamped N-Channel IGBTON-Semiconductor-3--70 K
MTP5N40ETMOS E-FET high energy power FETMotorola-4-55°C150°C258 K
S87C652-5N4016 MHz, CMOS single-chip 8-bit microcontrollerPhilips-SemiconductorsDIP40-40°C85°C185 K
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