| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFIB5N65A | HEXFET power MOSFET. VDSS = 650V, RDS(on) = 0.93 Ohm, ID = 5.1 A | International-Rectifier | - | 3 | -55°C | 150°C | 103 K |
| MGP15N60U | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 120 K |
| MGP15N60U | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 120 K |
| MGS05N60D | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 135 K |
| MGS05N60D | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 138 K |
| MMG05N60D | Insulated gate bipolar transistor | Motorola | - | 4 | -55°C | 150°C | 135 K |
| MMG05N60D | IGBT N-Channel (0.5A, 600V) | ON-Semiconductor | - | 4 | - | - | 138 K |
| MMG05N60DT1 | IGBT N-Channel (0.5A, 600V) | ON-Semiconductor | - | 4 | - | - | 138 K |
| MMG05N60DT3 | IGBT N-Channel (0.5A, 600V) | ON-Semiconductor | - | 4 | - | - | 138 K |
| MTY25N60E | TMOS E-FET power field effect transistor | Motorola | - | 3 | -55°C | 150°C | 236 K |
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